For those not in the know, 1γ (1-gamma) DDR5 is Micron’s latest advancement in DRAM fabrication and its third-generation 10-nanometer-class process node. It is supposed to achieve data transfer rates of up to 9200 mega transfers per second (MT/s), offering a 15 per cent speed improvement compared to its 1β predecessor.

Micron claims that the technology reduces power usage by over 20 per cent, making it important for AI and Data Centers. The enhanced speed and efficiency of 1γ DDR5 will support the scaling of compute capabilities, meeting the demands of future AI workloads.

Micron announced plans to sample 1y LPDDR5X 16Gb products to select partners in the second quarter of this year. The company aims to deliver industry-leading performance and up to 15% power savings for 2026 flagship smartphones.

In addition, Micron showcased the world's first G9-based UFS 4.1 and UFS 3.1 mobile storage solutions. Leveraging the G9 process node, these solutions offer significant speed and power efficiency improvements, with scalable mNAND capacities ranging from 256GB to 1TB.

Micron's latest UFS 4.1 solution also introduces proprietary firmware features for flagship smartphones, including Zoned UFS for improved read/write efficiency, data defragmentation for up to 60 per cent faster read speeds, pinned WriteBooster for up to 30 per cent faster random read speeds, and an intelligent latency tracker to optimise system performance.